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SiH2Cl2 Colorless. Flammable. Toxic and corrosive gas with a pungent odor. Melting point: -122°C. Boiling point: 8.2°C. Relative density of gas (air = 1): 4.599···
SiH2Cl2 Colorless. Flammable. Toxic and corrosive gas with a pungent odor. Melting point: -122°C. Boiling point: 8.2°C. Relative density of gas (air = 1): 4.599; relative density of liquid d4}122> 1.42. Critical temperature: 176.3°C. Vapor pressure at 20°C (absolute): 0.15 MPa. Specific volume (20°C, 1.0133×10⁵ Pa): 239 mL/g. Explosive limit in air: 1.3% to 98%. Reacts vigorously with water. Hydrolyzes in moist air to produce hydrochloric acid fumes. Highly corrosive.
Inhalation of the substance hydrolyzes in the body to produce hydrochloric acid, irritating the respiratory system and causing coughing and pulmonary edema. Prolonged exposure to dichlorosilane gas may lead to suffocation and death. Contact with skin can cause necrosis and chronic ulcers that fail to heal. Personnel involved in production must wear airtight protective clothing, gas masks, sealed goggles, latex gloves, and other personal protective equipment to prevent direct contact with the respiratory tract, eyes, and skin. Production equipment should be enclosed, and workshops must have adequate ventilation. Workers should take a shower after work.
○ Name: Dichlorosilane (DCS)
○ Purity: 4N
○ Annual Capacity: 1,000 tons
○ Features: Excellent deposition performance and high chemical stability, suitable for semiconductor epitaxy and thin-film processes.
○ Applications: Used as silicon source for semiconductor CVD and epitaxy, precursor for silicon-based films and organosilicon synthesis.
○ Fields: semiconductors, integrated circuit manufacturing
QUALITY CONTROL INDICATORS
| Testing Items | Unit | Indicator | Analytic Method |
| SiH2Cl2 | Vol% | ≥99.99 | - |
| STC | ppm(v/v) | ≤25 | GC |
| TCS | ≤10 | ||
| MCS+HCl | ≤50 | ||
| N2 | ≤1 | ||
| O2+Ar | ≤1 | ||
| CO | ≤1 | ||
| H2 | ≤10 | ||
| CO2 | ≤1 | ||
| CH4 | ≤1 |
HEAVY METAL AND OTHER ELEMENT INDICATORS
| Testing Items | Unit | Indicator | Analytic Method |
| B+Al | ppb | ≤0.10 | ICP-MS |
| P+As | ≤0.30 | ||
| Ga | ≤0.10 | ||
| Sb | ≤0.10 | ||
| In | ≤0.10 | ||
| Ca | ≤1.00 | ||
| Cr | ≤1.00 | ||
| Fe | ≤5.00 | ||
| K | ≤1.00 | ||
| Na | ≤0.20 | ||
| Ni | ≤1.00 | ||
| Mo | ≤0.10 | ||
| Mn | ≤0.20 | ||
| Cu | ≤0.20 | ||
| Cd | ≤0.50 | ||
| Co | ≤0.50 | ||
| Zn | ≤0.10 |